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Федеральное государственное бюджетное учреждение науки
Физический институт им. П.Н.Лебедева
Российской академии наук

Щурова Людмила Юрьевна
канд. физ.-мат. наук
Лаборатория терагерцовой спектроскопии твердого тела Высококвалифицированный старший научный сотрудник, кандидат наук г. Москва Ленинский пр-т. 53с4 (гл.здание) к. 277

Контакты

Дополнительная информация

Публикации 2009:

 

1.      В.А. Кульбачинский, Л.Ю. Щурова, Tермодинамические, транспортные и магнетотранспортные свойства свободных носителей заряда в легированных марганцем структурах с квантовой ямой GaAs/InGaAs/GaAs, ЖЭТФ, Т.136, с.135-147, 2009.

 

2.      L.Yu. Shchurova, Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well. Annalen der Physik 18, N12, 928-934 (2009).

 

3.      L. Shchurova, V. Kulbachinskii;Calculation of carrier scattering and negative magnetoresistance in Mn-doped GaAs/ InGaAs/ GaAs quantum well with ferromagnetism’, Solid State Phenomena: Magnetism and Magnetic Materials, V.152-153, p.283-286, 2009.

 

4.      L. Shchurova, V. Kulbachinskii, The thermodynamical, transport and magnetotransport properties of Mn-doped GaAs/InGaAs/GaAs quantum well with ferromagnetism. International Journal of Modern Physics B: Condensed Matter Physics, V.23, p. 3596-3601, 2009.

 

5.      L. Shchurova, V. Kulbachinskii; Scattering of carries in δ-doped by Mn InGaAs quantum well with hole-mediated ferromagnetism. Optoelectronic and Microelectronic Materials & Devices: COMMAD 08, V.26, p.118-121, 2009.

 

6.      V. Kulbachinskii; L. Shchurova, N. Kuznetsov, Anomalous transport in ferromagnetic GaAs/InxGa1-xAs/GaAs quantum well delta-doped with Mn and C. Optoelectronic and Microelectronic Materials & Devices: COMMAD 08, V.26, p.51-54, 2009.

 

7.      Л. Ю. Щурова, В. А. Кульбачинский, Tермодинамические, транспортные и магнетотранспортные свойства свободных носителей заряда в легированных марганцем структурах с квантовой ямой GaAs/InGaAs/GaAs, VIII Российская конференция по физике полупроводников, 28 сентября – 3 октября 2009 г., Новосибпрск - Томск. Тезисы, стр. 195.

 

8.      L.Yu. Shchurova, Energy States, Transport, and Magnetotransport in Diluted Magnetic Semiconductor (Ga,Mn)As with Quantum Well InGaAs. International Conference on Materiald for Advanced Technologies 2009 (5th ICMAT) : Proceedings of Symposium E: Nanostructured Magnetic Materials and Their Applications,  Singapore, 28 June - 3 July 2009, p.74.

 

9.      L.Yu. Shchurova, Calculation of profile of сharge carrier concentration and magnetoresistance in a wide potential well in electric and magnetic fields, Proceedings of Workshop & International Conference ‘Tranport in Interacting Disorded Systems, Budapest, Hungary, 31 August-5 September,2009, p. 54.

 

10.  L.Yu. Shchurova, D.R. Sarkissian, Quantum confinement levels in δ-doped semiconductor structures with quantum well, Proceedings of Workshop & International Conference ‘Tranport in Interacting Disorded Systems, Budapest, Hungary, 31 August-5 September,2009, p. 55.

 

 

Публикации 2008:

 

1.   L. Shchurova. Magnetic ordering of two-dimensional ion lattice and coherent
states of delocalized charge carriers in this ion lattice. Journal of
Physics 100, 99-103 (2008).

 

2.   Kulbachinskii V., Shchurova L., Kuznetsov N. Calculation of carrier scattering and negative magnetoresistance in Mn-doped GaAs/InGaAs/GaAs quantum well with ferromagnetism, Moscow International Symposium on Magnetism 2008, June 20-25. Book of Abstracts, O-6-7, p. 596, Moscow, 2008.

 

3.   L. Shchurova, V. Kulbachinskii, Calculation of carrier scattering in Mn-doped InGaAs quantum well with hole-mediated ferromagnetism,  29-th International Conference on the Physics of Semiconductors, ICPS 2008, Rio de Janeiro, Jul 27  – and Aug 1, 2008, Abstracts, Tu-PC1-060012.

 

4.   L. Shchurova, V. Kulbachinskii, The thermodynamical, transport and magnetotransport properties of Mn-doped GaAs/InGaAs/GaAs quantum well with ferromagnetism, International Conference on Electronic Materials (ICEM 2008) Sydney, Australia - 28th July to 1st August 2008, Symposium R: Superconductors, Electronic and Magnetic Materials, R1-S5.25, p. 95.

 

6.   Kulbachinskii V., Shchurova L., Anomalous transport in ferromagnetic GaAs/InxGa1-xAs/GaAs quantum well delta-doped with Mn and C, International Conference on Electronic Materials (ICEM 2008) Sydney, Australia - 28th July to 1st August 2008, Symposium B: Compound Semiconductor Materials Proc. p. 96, Sydney, 2008.

 

Публикации 2007:

 

  1. L. Shchurova. Vortex states above the critical temperature Tc in hole-doped cuprates, Physica C: Superconductivity and its applications, 460, p.1230-1231, Sep 2007.

 

  1. V.N. Murzin, L.Yu. Shchurova, Yu.A. Mityagin. “Time dependent model of resonant tunneling in multiple-wide-quantum-well structures with homogeneous and  nonhomogeneous interfaces, AIP Conference Proceedings, v.893, p.589-590 (2007).

 

  1. V.N.Murzin, L.Yu.Shchurova. Vertical transport in multiple-wide-quantum-well structures with homogeneous and with large-scale disorder nonhomogeneous interfaces, Journal of Physics: Conference Series 61, 1047–1050 (2007).

 

  1. L.Yu. Shchurova, Magnetic ordering of two-dimensional ion lattice and coherent states of delocalized charge carriers in this ion lattice, Intern. Conf. Nanoscience and Nanotechnology , IVC-17/ICSS-13 and ICN+T2007 Congress, 2-6 July, 2007, Stockholm, Sweden, p 102.

 

  1. Л. Щурова, В.Н. Мурзин, Диссипативное туннелирование через резонансные и виртуальные электронные состояния в структурах с широкими квантовыми ямами. 8-ая Российская конференция по физике полупроводников, Екатеринбург, 30 сент.-5 окт. 2007, с. 171.

 

Публикации

2009
  1. L.Yu. Shchurova
    Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well Annalen der Physik, vol. 18, N12, pp. 928-934, (2009)
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