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ФИАННаучная деятельностьДля сотрудников |
Щурова Людмила Юрьевна
канд. физ.-мат. наук
Лаборатория терагерцовой спектроскопии твердого тела
Высококвалифицированный старший научный сотрудник, кандидат наук г. Москва Ленинский пр-т. 53с4 к. 277
Контакты
Телефоны:
Схема расположения корпуса:
Дополнительная информацияПубликации 2009:
1. В.А. Кульбачинский, Л.Ю. Щурова, Tермодинамические, транспортные и магнетотранспортные свойства свободных носителей заряда в легированных марганцем структурах с квантовой ямой GaAs/InGaAs/GaAs, ЖЭТФ, Т.136, с.135-147, 2009.
2. L.Yu. Shchurova, Calculation of profile of charge carrier concentration in modulation doped structure with a wide potential well. Annalen der Physik 18, N12, 928-934 (2009).
3. L. Shchurova, V. Kulbachinskii; ‘Calculation of carrier scattering and negative magnetoresistance in Mn-doped GaAs/ InGaAs/ GaAs quantum well with ferromagnetism’, Solid State Phenomena: Magnetism and Magnetic Materials, V.152-153, p.283-286, 2009.
4. L. Shchurova, V. Kulbachinskii, The thermodynamical, transport and magnetotransport properties of Mn-doped GaAs/InGaAs/GaAs quantum well with ferromagnetism. International Journal of Modern Physics B: Condensed Matter Physics, V.23, p. 3596-3601, 2009.
5. L. Shchurova, V. Kulbachinskii; Scattering of carries in δ-doped by Mn InGaAs quantum well with hole-mediated ferromagnetism. Optoelectronic and Microelectronic Materials & Devices: COMMAD 08, V.26, p.118-121, 2009.
6. V. Kulbachinskii; L. Shchurova, N. Kuznetsov, Anomalous transport in ferromagnetic GaAs/InxGa1-xAs/GaAs quantum well delta-doped with Mn and C. Optoelectronic and Microelectronic Materials & Devices: COMMAD 08, V.26, p.51-54, 2009.
7. Л. Ю. Щурова, В. А. Кульбачинский, Tермодинамические, транспортные и магнетотранспортные свойства свободных носителей заряда в легированных марганцем структурах с квантовой ямой GaAs/InGaAs/GaAs, VIII Российская конференция по физике полупроводников, 28 сентября – 3 октября 2009 г., Новосибпрск - Томск. Тезисы, стр. 195.
8. L.Yu. Shchurova, Energy States, Transport, and Magnetotransport in Diluted Magnetic Semiconductor (Ga,Mn)As with Quantum Well InGaAs. International Conference on Materiald for Advanced Technologies 2009 (5th ICMAT) : Proceedings of Symposium E: Nanostructured Magnetic Materials and Their Applications, Singapore, 28 June - 3 July 2009, p.74.
9. L.Yu. Shchurova, Calculation of profile of сharge carrier concentration and magnetoresistance in a wide potential well in electric and magnetic fields, Proceedings of Workshop & International Conference ‘Tranport in Interacting Disorded Systems, Budapest, Hungary, 31 August-5 September,2009, p. 54.
10. L.Yu. Shchurova, D.R. Sarkissian, Quantum confinement levels in δ-doped semiconductor structures with quantum well, Proceedings of Workshop & International Conference ‘Tranport in Interacting Disorded Systems, Budapest, Hungary, 31 August-5 September,2009, p. 55.
Публикации 2008:
1. L. Shchurova.
Magnetic ordering of two-dimensional ion lattice and coherent
2. Kulbachinskii V., Shchurova L., Kuznetsov N. Calculation of carrier scattering and negative magnetoresistance in Mn-doped GaAs/InGaAs/GaAs quantum well with ferromagnetism, Moscow International Symposium on Magnetism 2008, June 20-25. Book of Abstracts, O-6-7, p. 596, Moscow, 2008.
3. L. Shchurova, V. Kulbachinskii, Calculation of carrier scattering in Mn-doped InGaAs quantum well with hole-mediated ferromagnetism, 29-th International Conference on the Physics of Semiconductors, ICPS 2008, Rio de Janeiro, Jul 27 – and Aug 1, 2008, Abstracts, Tu-PC1-060012.
4. L. Shchurova, V. Kulbachinskii, The thermodynamical, transport and magnetotransport properties of Mn-doped GaAs/InGaAs/GaAs quantum well with ferromagnetism, International Conference on Electronic Materials (ICEM 2008) Sydney, Australia - 28th July to 1st August 2008, Symposium R: Superconductors, Electronic and Magnetic Materials, R1-S5.25, p. 95.
6. Kulbachinskii V., Shchurova L., Anomalous transport in ferromagnetic GaAs/InxGa1-xAs/GaAs quantum well delta-doped with Mn and C, International Conference on Electronic Materials (ICEM 2008) Sydney, Australia - 28th July to 1st August 2008, Symposium B: Compound Semiconductor Materials Proc. p. 96, Sydney, 2008.
Публикации 2007:
Публикации2009
Расположение корпуса на территории института |
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Федеральное государственное бюджетное учреждение науки
Физический институт имени П. Н. Лебедева
Российской академии наук |